? 2004 ixys all rights reserved m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.5/13 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v v v v v dss dss dss dss dss v gs = 0 v, i d = 1ma 800 v v v v v v gs(th) gs(th) gs(th) gs(th) gs(th) v ds = v gs , i d = 8 m a 2.5 5.0 v i gss v gs = 30 v, v ds = 0 200 na i dss v ds = v dss t j = 25 c 50 a v gs = 0 v t j = 125 c 3 ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 0.15 ? note 1 ds99028a(09/04) hiperfet tm power mosfet n-channel enhancement mode avalanche rated, low q g , low intrinsic r g high dv / d t , low t rr ixfn 50n80q2 v dss = 800 v i d25 = 50 a r ds(on) = 0.15 ? ? ? ? ? t rr 300 ns symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 800 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c50a i dm t c = 25 c, pulse width limited by t jm 200 a i ar t c = 25 c50a e ar t c = 25 c60mj e as t c = 25 c 5.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 20 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 890 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms, t = 1 minute 2500 v s g s d minibloc, sot-227 b (ixfn) e153432 g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source features ? double metal process for low gate resistance minibloc, with aluminium nitride isolation unclamped inductive switching (uis) rated low package inductance fast intrinsic rectifier applications dc-dc converters switched-mode and resonant-mode power supplies dc choppers pulse generators advantages easy to mount space savings high power density
ixys reserves the right to change limits, test conditions, and dimensions. IXFN50N80Q2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 ? i d25 note 1 32 48 s c iss 7200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1200 pf c rss 230 pf t d(on) 26 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 25 ns t d(off) r g = 1 ? (external) 60 ns t f 13 ns q g(on) 260 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 56 nc q gd 120 nc r thjc 0.14 k/w r thck 0.05 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 50 a i sm repetitive; 200 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr 300 ns q rm 1.1 c i rm 8a i f = 25a -di/dt = 100 a/ s v r = 100 v note: 1. pulse test, t 300 s, duty cycle d 2 % minibloc, sot-227 b outline m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463
? 2004 ixys all rights reserved IXFN50N80Q2 fig. 2. extended output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 80 90 03691 21 51 821 v ds - volts i d - amperes v g s = 1 0v 5v 6v 7v fig. 3. output characteristics @ 125 deg. c 0 5 10 15 20 25 30 35 40 03691215 v ds - volts i d - amperes v g s = 1 0v 7v 5v 6v fig. 1. output characteristics @ 25 deg. c 0 5 10 15 20 25 30 35 40 0 1234567 v ds - volts i d - amperes v g s = 1 0v 7v 5v 6v fig. 4. r ds(on) normalized to i d25 value vs. junction temperature 0.4 0.7 1 1. 3 1. 6 1. 9 2.2 2.5 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s (on) - normalize d i d = 50a i d = 25a v g s = 1 0v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 -50-25 0 25 50 75 100125150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) normalized to i d25 value vs. i d 0.7 1 1. 3 1. 6 1. 9 2.2 2.5 2.8 0 102030405060708090100 i d - amperes r d s (on) - normalized t j = 1 25 o c t j = 25 o c v g s = 1 0v
ixys reserves the right to change limits, test conditions, and dimensions. IXFN50N80Q2 fig. 11. capacitance 10 0 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - pf c iss c oss c rss f = 1 m hz fig. 10. gate charge 0 2 4 6 8 10 0 40 80 120 160 200 240 280 q g - nanocoulombs v g s - volts v d s = 400v i d = 25a i g = 1 0ma fig. 7. input admittance 0 10 20 30 40 50 60 70 80 33.5 44.555.5 66.5 v gs - volts i d - amperes t j = 1 20 o c 25 o c -40 o c fig. 12. maximum transient thermal resistance 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w) fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 0 10 2030405060708090 i d - amperes g f s - siemens t j = -40 o c 25 o c 1 25 o c fig. 9. source current vs. source-t o-drain voltage 0 25 50 75 10 0 12 5 15 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd - volts i s - amperes t j = 1 25 o c t j = 25 o c
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